Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs.
نویسندگان
چکیده
The scanning tunneling microscope is used to study arsenic-related point defects in low-temperaturegrown GaAs. Tunneling spectroscopy reveals a band of donor states located near E„+0. 5 eV arising from the defects. Images of this state reveal a central defect core, with two satellites located about 15 A from the core. The structure of the defect is found to be consistent with that of an isolated arsenic antisite defect (As on a Ga site) in a tetrahedral environment.
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ورودعنوان ژورنال:
- Physical review letters
دوره 71 8 شماره
صفحات -
تاریخ انتشار 1993